• 文献标题:   Origin of the Flat Band in Heavily Cs-Doped Graphene
  • 文献类型:   Article
  • 作  者:   EHLEN N, HELL M, MARINI G, HASDEO EH, SAITO R, FALKE Y, GOERBIG MO, DI SANTO G, PETACCIA L, PROFETA G, GRUNEIS A
  • 作者关键词:   graphene, flat band, angle resolved photoemission spectroscopy, alkalimetal intercalation compound, stoner criterion
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Cologne
  • 被引频次:   4
  • DOI:   10.1021/acsnano.9b08622
  • 出版年:   2020

▎ 摘  要

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.