▎ 摘　　要

The electrical properties of a resistive-switching memory based on a single graphene sheet suspended on a patterned indium-tin-oxide electrode pair were investigated. Current-voltage measurements on the planar device showed a large ON/OFF ratio (similar to 10(6)) and excellent retention ability in ambient conditions. Data storage of the device can be realized by applying voltage bias and rewritten after simple heat treatment. Switching mechanisms for the graphene-based memory device were found to be related to the local oxidation of graphene sheet at the graphene/electrode interface. (C) 2012 American Institute of Physics. [doi:10.1063/1.3680093]