▎ 摘　　要

Three dimensional (3D) porous silicon/reduced graphene oxide (Si/rGO) composites with typical networks have suffered damage during electrode preparation, which evidently affects the cycle and rate capabilities of Si/rGO anodes. Here, a controllable evaporation dry method is proposed to fabricate structure-preserved 3D porous Si/rGO anode materials by tuning the pore size distribution of the networks. As a result, after evaporation drying for 3.5 h, the optimal sample of 3D porous Si/rGO anode (denoted as Si-G-3.5) with a pore size of similar to 500 nm could preserve its 3D network during the electrode preparation process. While the structures of Si/rGO composites with different drying times (denoted as Si-G-0, Si-G-2.5 and Si-G-4) failed to be preserved. Consequently, The Si-G-3.5 anode exhibits a high reversible specific capacity of 1563 mA h g(-1) at 50 mA g(-1), 90% capacity retention after 100 cycles and superior rate capability (955 mA h g(-1) at 2 A g(-1)).