▎ 摘　　要

Graphene can find great potential applications in the future electronic devices. In bilayer graphene, the relative rotation angle between graphene layers can modulate the interlayer interaction and hence induces richphysical phenomena. We systematically study the temperature dependent magnetoresistance (MR) properties inthe epitaxial bilayer graphene (BLG) grown on the SiC substrate. High quality BLG is synthesized by molecularbeam epitaxy in ultra-high vacuum. We observe the negative MR under a small magnetic field appliedperpendicularly at temperature < 80 K, which is attributed to a weak localization effect. The weak localizationeffect in our epitaxial BLG is stronger than previously reported ones in epitaxial monolayer and multilayergraphene system, which is possibly because of the enhanced interlayer electron transition and thus the enhancedvalley scattering in the BLG. As the magnetic field increases, the MR exhibits a classical Lorentz MR behavior.Moreover, we observe a linear magnetoresistance behavior in a large field, which shows no saturation for themagnetic field of up to 9 T. In order to further investigate the negative and linear magnetoresistance, weconduct angle-dependent magnetoresistance measurements, which indicates the two-dimensional magneto-transport phenomenon. We also find that the negative MR phenomenon occurs under a parallel magnetic field,which may correspond to the moire pattern induced local lattice fluctuation as demonstrated by scanningtunneling microscopy measurement on an atomic scale. Our work paves the way for investigating the intrinsic properties of epitaxial BLG under various conditions