• 文献标题:   Quantum Hall effect in graphene
  • 文献类型:   Article
  • 作  者:   KOSHINO M, ANDO T
  • 作者关键词:   graphene, quantum hall effect, anderson localization
  • 出版物名称:   INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • ISSN:   0217-9792
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   0
  • DOI:   10.1142/S0217979207042574
  • 出版年:   2007

▎ 摘  要

The integer quantum Hall effect is studied for a non-interacting electron in a monolayer graphene. We numerically calculate the Hall conductivity in a single Landau level with disorder, and estimate the critical energies for the extended states in thermodynamic limit. We show that a valley-degenerated (K and K') Landau band has extended levels at two different energies, indicating that an extra Hall plateau appears inside.