▎ 摘　　要

In this paper, we report a physics-based compact model for monolayer graphene field-effect transistors (m-GFETs) based on the 2-D Density of States of monolayer graphene and the drift-diffusion equation. Furthermore, the Ward-Dutton charge partitioning scheme has been incorporated to the model extending its capabilities to AC and transient simulations. The model has been validated through comparison with DC and RF measurements from two different long-channelm-GFET technologies. Moreover, values of parasitic elements included in the model are extracted from measurements on dedicated test structures and verified through electromagnetic simulations (EM). Finally, an EM-SPICE co-simulation has been carried out to assess the applicability of the developedm-GFET model for the design of "balun" circuits.