• 文献标题:   Effects of buffer gas on N-doped graphene in a non-thermal plasma process
  • 文献类型:   Article
  • 作  者:   LU ZS, WANG C, CHEN XH, SONG M, XIA WD
  • 作者关键词:   nitrogengraphene nanoflake, buffer ga, nonthermal plasma
  • 出版物名称:   DIAMOND RELATED MATERIALS
  • ISSN:   0925-9635 EI 1879-0062
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1016/j.diamond.2021.108548 EA AUG 2021
  • 出版年:   2021

▎ 摘  要

A non-thermal plasma process based on a magnetically stabilized gliding arc discharge (MSGAD) at atmospheric pressure is developed for the synthesis of nitrogen-graphene nano-flakes (N-GNFs). Using propane as a precursor, N-GNFs with low relative amounts of bonded oxygen, large specific surface area (200-500 m(2)/g) and nitrogen doping level of 1-3% are produced by adjusting the buffer gas of the reaction system. N-doping is confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental CNHSO analysis. The effects of buffer gas on N-GNFs are investigated. It is found that the nitrogen configuration is always dominated by pyrrolic nitrogen. A high nitrogen flow rate with a total flow rate constant promotes a higher doping level of N, but more defects appear. The addition of NH3 or H-2 further increases the nitrogen doping level, and eliminates some defects. Different buffer gases lead to different types and concentrations of active species, which is a key factor in the synthesis of nitrogen-doped graphene.