• 文献标题:   Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   SANO E, OTSUJI T
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922
  • 通讯作者地址:   Hokkaido Univ
  • 被引频次:   11
  • DOI:   10.1143/JJAP.48.041202
  • 出版年:   2009

▎ 摘  要

Energy band structures for monolayer and bilayer armchair graphene nanoribbons on SiC substrates are investigated using a nearest-neighbor tight-binding approximation with two distinct models (interlayer coupling and substrate-induced asymmetry models). Differences in the band structures and charge distributions based on the two models are clarified. The calculation results suggest that wide films of bilayer armchair graphene on SiC substrates should be used for electronics applications such as graphene-channel field-effect transistors. (c) 2009 The Japan Society of Applied Physics