• 文献标题:   Theory of large tunneling magnetoresistance in a gapped graphene-based ferromagnetic superconductor F/(FS) junction
  • 文献类型:   Article
  • 作  者:   SOODCHOMSHOM B, TANG IM, HOONSAWAT R
  • 作者关键词:   gapped graphene, ferromagnetic superconductor, spintronic, tunneling magnetoresistance, massive dirac electron, switching effect
  • 出版物名称:   PHYSICA CSUPERCONDUCTIVITY ITS APPLICATIONS
  • ISSN:   0921-4534
  • 通讯作者地址:   Mahidol Univ
  • 被引频次:   2
  • DOI:   10.1016/j.physc.2010.03.001
  • 出版年:   2010

▎ 摘  要

Coexistence of superconductivity and ferromagnetism in a gapped graphene-based system (FS) is theoretically investigated. The center-of-mass momentum, P, of a Cooper pair in FS is found to be P similar to 2E(ex)/(h nu(F)root 1 - (m/E-FS)(2)), where m, E-ex, E-Fs are the rest mass energy of the Dirac electron, exchange energy and the Fermi energy in the superconductor FS, respectively. It is unlike the nature in a conventional FFLO state where P similar to 2E(ex)/h nu(F). This work studies the magneto effect on the transport property of a F/(FS) junction where F is a ferromagnetic gapless graphene. In this work, FS is achieved by depositing a conventional ferromagnetic s-wave superconductor on the top of gapped graphene sheet. The Zeeman splitting in FS induces spin-dependent Andreev resonance. The conductances effected by both spin-dependent specular Andreev reflections and spin-dependent Andreev resonances are investigated. The interplay between the spin-dependent specular Andreev reflection in the F region and the spin-dependent Andreev resonance in the FS region causes a very large tunneling magnetoresistance vertical bar TMR vertical bar similar to 3000% for m -> E-FS, possibly valuable in the graphene-based spintronic devices. This is because of the coexistence of the superconductivity and ferromagnetism in FS and the relativistic nature of electrons in graphene. (C) 2010 Published by Elsevier B.V.