• 文献标题:   Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   DING XL, DING GQ, XIE XM, HUANG FQ, JIANG MH
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   99
  • DOI:   10.1016/j.carbon.2011.02.022
  • 出版年:   2011

▎ 摘  要

Few layer graphene was grown on hexagonal boron nitride single crystal flakes by chemical vapor deposition without using metal catalysts. High quality and thickness controllability of the graphene layers are confirmed by Raman spectroscopy and transmission electron microscopy. Chemical vapor deposition of graphene on this perfect-lattice-matching dielectric substrate offers many advantages including cost effectiveness, easy scalability and compatibility with standard intergraded circuit processes and promises an advance to graphene's applications in microelectronics and optoelectronics. (C) 2011 Elsevier Ltd. All rights reserved.