• 文献标题:   Adsorption behavior of O-2 on vacancy-defected graphene with transition-metal dopants: A theoretical study
  • 文献类型:   Article
  • 作  者:   ZHOU QX, YONG YL, SU XY, JU WW, FU ZB, LI XH
  • 作者关键词:   graphene, defected, dopant, adsorption
  • 出版物名称:   INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • ISSN:   0217-9792 EI 1793-6578
  • 通讯作者地址:   Henan Univ Sci Technol
  • 被引频次:   0
  • DOI:   10.1142/S0217979218503046
  • 出版年:   2018

▎ 摘  要

The influence of vacancy and dopants on the adsorption of O-2 molecule on graphene was explored by using the density functional theory (DFT) method. The results indicated that the presence of vacancy-defect improved the sensitivity of graphene toward the O-2 molecule. Furthermore, the two O atoms of O-2 molecule separately formed chemical bonds with C atoms at the defect sites. After introducing the transition-metal (TM) dopants, the O-O bond length of O-2 molecule was enlarged by the adsorption on the surface of graphene. Furthermore, the Mn-doped adsorption complexes became magnetic, which was mainly contributed by the O-2p and Mn-3d orbitals.