▎ 摘　　要

We develop a theory for the temperature and density dependence of phonon-limited resistivity rho(T) in bilayer and multilayer graphene and compare with the corresponding monolayer result. For the unscreened case, we find rho approximate to CT with C proportional to v(F)(-2) in the high-temperature limit, and rho approximate to AT(4) with A proportional to v(F)(-2)k(F)(-3) in the low-temperature Bloch-Gruneisen limit, where v(F) and k(F) are Fermi velocity and Fermi wave vector, respectively. If screening effects are taken into account, rho approximate to CT in the high-temperature limit with a renormalized C, which is a function of the screening length, and rho approximate to AT(6) in the low-temperature limit with A proportional to k(F)(-5) but independent of v(F). These relations hold in general with v(F) and a chiral factor in C determined by the specific chiral band structure for a given density.