• 文献标题:   Ni-Doped Epitaxial Graphene Monolayer on the Ni(111) Surface
  • 文献类型:   Article
  • 作  者:   KOVALENKO SL, PAVLOVA TV, ANDRYUSHECHKIN BV, ZHIDOMIROV GM, ELTSOV KN
  • 作者关键词:  
  • 出版物名称:   PHYSICS OF WAVE PHENOMENA
  • ISSN:   1541-308X EI 1934-807X
  • 通讯作者地址:   Russian Acad Sci
  • 被引频次:   0
  • DOI:   10.3103/S1541308X20030115
  • 出版年:   2020

▎ 摘  要

Nickel-doped graphene has been synthesized from propylene on the Ni(111) surface and studied using scanning tunneling microscopy (STM) and density functional theory (DFT). It is established that nickel centers are formed during graphene synthesis on the Ni(111) surface by both chemical vapor deposition (CVD) and temperature-programmed growth (TPG); apparently, they are always present in graphene synthesized on Ni(111). The centers are observed in STM images as single defects or defect chains and identified by DFT calculations as Ni atoms in carbon bivacancies. These nickel atoms are positively charged and may be of interest for single-atom catalysis. The incorporated Ni atoms should remain in graphene after the detachment from the substrate since they bound more strongly with carbon atoms in graphene than with substrate nickel atoms.