▎ 摘　　要

This exploration emphasizes the juxtaposition of thermal stability in InGaP/GaAs p-n-p and n-p-n collectorup (C-up) heterojunction bipolar transistors (HBTs), and specially for the performance-matched complementary wireless applications under extreme operations. High-quality graphene packaging, beneath the graded InGaAs base and the nonuniform collector of C-up HBTs, is proposed. Significantly, the multifinger devices achieved compeling high speed and heat dissipation. The results show that the reasonably matched performance has been exhibited, and a remarkable improvement in the surface temperature rise is attained. Due to the effective alleviation of adverse feedback phenomena by using this innovation, a better thermal stability in the p-n-p device than in the n-p-n device has been evidently observed.