▎ 摘　　要

Ballistic (collision free) and drift-diffusive (collision dominated) transport mechanisms are both present in graphene, and they together contribute in the current conduction in a graphene FET (GFET). In this paper, we propose an analytical drain current model based on ballistic (n(B)) and drift-diffusive (n(D)) charge densities, backscattering coefficient (R), and quasi-ballistic mobility (mu(eff)). nB is calculated using the McKelvey flux theory and nD using the surface potential approach. A closed-form analytical expression is derived for the backscattering coefficient, which is valid under both low and high electric field conditions. The effective quasi-ballistic mobility is obtained by considering both scattering-dominated and scattering free mobilities. The proposed model is well aligned with experimental data, in all regions of operation, for single- and double-gate GFETs.