• 文献标题:   Extraction of the Interface State Density of Top-Gate Graphene Field-Effect Transistors
  • 文献类型:   Article
  • 作  者:   JUNG U, KIM YJ, KIM Y, LEE YG, LEE BH
  • 作者关键词:   top gate graphene fet, interfacial trap density, graphene instability, discharge current analysis dca
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Gwangju Inst Sci Technol
  • 被引频次:   9
  • DOI:   10.1109/LED.2015.2402287
  • 出版年:   2015

▎ 摘  要

Novel electrical measurement method, discharge current analysis (DCA), is introduced to extract the density and energy distribution of charge traps at the dielectric interface of top-gate graphene field-effect transistors. Using DCA method, the highest charge trap density similar to 10(13) (cm(-2) . eV(-1)) is extracted at Fermi level similar to 0.4 eV. This is the first quantitative estimation of trap density at a specific Fermi level of graphene.