▎ 摘　　要

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. Free-standing SiNWs were then obtained using ultrasono method in toluene. Graphene oxide was prepared using the modified Hummers' process. Activated microwave-exfoliated graphite oxide (MEGO) was prepared and used for composition of silicon nanowires and graphene oxide via hydrosilylation. The silicon nanowire-graphene composite materials were characterized using XPS and FE-SEM.