▎ 摘　　要

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i. e., gated or doped with a tunable and finite carrier density ) two-dimensional graphene layers as a function of temperature (T) and carrier density (n). We find a temperature-dependent phonon-limited resistivity rho(ph)(T) to be linear in temperature for T >= 50 K with the room-temperature intrinsic mobility reaching the values of above 105 cm(2)/Vs. We comment on the low-temperature Bloch-Gruneisen behavior where rho(ph)(T)similar to T-4 for unscreened electron-phonon coupling.