▎ 摘　　要

Using AFORS-HET v2.5 solar cell simulation software, four "p-i-n" structures configured as graphene/n-MoS2/perovskite/p-cSi/Au (perovskite: MAPbI(3), MAPbI(3-x)Cl(x), MASnI(3,) and FASnI(3); p-cSi=p-type crystalline silicon) have been investigated for an efficient solar cell application. In these structures, graphene and 2D n-type molybdenum disulfide (n-MoS2) have been used as a front contact and an emitter layer, respectively. By optimizing the various parameters of graphene, n-MoS2, perovskite materials, and p-cSi, the highest power conversion efficiency (eta) of 25.75% with V-OC = 689.8 mV, J(SC) = 46.35 mA/cm(2), and FF = 80.53% have been achieved for graphene/n-MoS2/MAPbI(3-x) Cl-x/p-cSi/Au structure. Further, to study the effect of the thickness of MAPbI(3-x) Cl-x on cell performance, the thickness has been changed from 100 to 20 nm. The maximum efficiency of 26.65% has been obtained at the thickness of 20 nm. This study provides a route for the application of graphene as front contact, n-MoS2 as an emitter layer in MAPbI(3-x)/p-cSi based "p-i-n" structure for solar cell application to obtain higher efficiency.