▎ 摘　　要

The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to get optimum device dimensions. The present work deals with the design and simulation of hinge structure-based Graphene oxide (GO) NEM switch. The Finite Element Modeling (FEM) of the NEM switch for different design parameters have performed in COMSOL Multiphysics. Moreover, the radio frequency (RF) performance of the switch structure with minimum pull-in voltage has also been investigated. The results state that pull-in voltage and von Mises stress exhibit a negative correlation with beam length and positive correlation with beam thickness and air gap. Furthermore, a long and thin suspended beam requires low pull-in voltage and undergoes less von Mises stress. The von Mises stress exhibits a strong effect at beam edges, perforation corners, and beam-top electrode interface due to edge termination effect. The present work facilitates optimisation of design parameters of a NEM switch that requires low pull-in voltage, undergoes less von Mises stress, and exhibits good RF performance.