▎ 摘　　要

This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AIN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications.