▎ 摘　　要

In this work, an Ag/ZnO/Graphene structure resistive random access memory (RRAM) is prepared through RF magnetron sputtering. Compared to the Ag/ZnO/Au structure device, the endurance of the device using a graphene electrode up to 3 x 103 cycles. It has a self-current compliance function of 2 x 10-4 A and 30 times switching resistance ratio and characteristics without electroforming. The density of states (DOS) of ZnO supercells with different space groups are calculated by using the first-principles, and it is analyzed that the contributions of different supercells to the conductivity and contact type of the RRAM. Combined with the I-V curve of the RRAM, it illustrated that the conduction path is created by the space-charge-limited conduction (SCLC) of electrons captured by oxygen vacancy traps. The biocompatibility of the device is tested by a cell toxicity test. It proves that the Ag/ZnO/Graphene RRAM has high biocompatibility and broad applicability in implantable biomedical devices.