• 文献标题:   Theoretical Studies of Oxygen Reactivity of Free-Standing and Supported Boron-Doped Graphene
  • 文献类型:   Article
  • 作  者:   DI VALENTIN C, FERRIGHI L, FAZIO G
  • 作者关键词:   boron, density functional theory, graphene, metal interface, oxygen reactivity
  • 出版物名称:   CHEMSUSCHEM
  • ISSN:   1864-5631 EI 1864-564X
  • 通讯作者地址:   Univ Milano Bicocca
  • 被引频次:   7
  • DOI:   10.1002/cssc.201501439
  • 出版年:   2016

▎ 摘  要

Graphene inertness towards chemical reactivity can be considered as an accepted postulate by the research community. This limit has been recently overcome by chemically and physically modifying graphene through non-metal doping or interfacing with acceptor/donor materials (metals or semiconductors). As a result, outstanding performances as catalytic, electrocatalytic, and photocatalytic material have been observed. In this critical Review we report computational work performed, by our group, on the reactivity of free-standing, metal-and semiconductor-supported B-doped graphene towards oxygen, which is at the basis of extremely important energy-related chemical processes, such as the oxygen reduction reaction. It appears that a combination of doping and interfacing approaches for the activation of graphene can open unconventional and unprecedented reaction paths, thus boosting the potential of modified graphene in many chemical applications.