• 文献标题:   SYNTHETIC GRAPHENE GROWN BY CHEMICAL VAPOR DEPOSITION ON COPPER FOILS
  • 文献类型:   Article
  • 作  者:   CHUNG TF, SHEN T, CAO HL, JAUREGUI LA, WU W, YU QK, NEWELL D, CHEN YP
  • 作者关键词:   cvd graphene, atmospheric pressure cvd growth, copper foil, raman scattering, electronic transport
  • 出版物名称:   INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • ISSN:   0217-9792 EI 1793-6578
  • 通讯作者地址:   Purdue Univ
  • 被引频次:   20
  • DOI:   10.1142/S0217979213410026
  • 出版年:   2013

▎ 摘  要

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interest. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapor deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this paper, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapor deposition. We also discuss potential applications of such large-scale synthetic graphene.