• 文献标题:   Graphene p-n junctions with nonuniform Rashba spin-orbit coupling
  • 文献类型:   Article
  • 作  者:   RATAJ M, BARNAS J
  • 作者关键词:   band structure, electric field effect, electrical conductivity, elemental semiconductor, graphene, pn junction, spinorbit interaction
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Adam Mickiewicz Univ
  • 被引频次:   14
  • DOI:   10.1063/1.3641873
  • 出版年:   2011

▎ 摘  要

Linear conductance of graphene-based p-n junctions with Rashba spin-orbit coupling is considered theoretically. A square potential step is used to model the junctions, while the coupling is introduced in terms of the Kane-Mele model (C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)). The main objective is a description of electronic transport in junctions where Rashba parameter is nonuniform. Such a nonuniformity can appear when graphene is asymmetrically covered with atomic layers, or when Rashba coupling is strongly dependent on electric field. It is shown that conductance is significantly modified by the considered nonuniformity, which is most clearly manifested by an anomalous minimum at a certain potential step height. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3641873]