▎ 摘　　要

Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect transistors, and assess the dc and high frequency figures of merit. The steep subthreshold behavior can enable I-ON/I-OFF ratios exceeding 10(4) even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.