▎ 摘　　要

Graphene film growth on a Cu-Ni alloy thin film with various alloy compositions is reported in this paper. A magnetron co-sputtered thin film was applied to precisely vary the alloy composition, and graphene film was grown at conventional growth conditions by inductively coupled plasma chemical vapor deposition. A highly uniform single-layer graphene, mostly bilayer graphene with similar to 70% coverage, and mostly few-layer graphene were obtained on the Cu-Ni alloys with 8.6, 21, and 34.8 atom% Ni, respectively. The measured resistance decreased from similar to 1429 Omega sq(-1), to similar to 756 Omega sq(-1) and to similar to 240 Omega sq(-1), and the transmittance decreased from 97%, to 95% and to 89%, respectively, as the Ni composition increased. The film thickness of the graphene layers could be controlled by tuning the alloy composition via the co-sputtering process. But the analysis also indicates that, at the same time, the degree of disordered stacking between layers also tends to increase with increasing Ni content in the Cu-Ni film.