• 文献标题:   Photoconductivity Switching in MoTe2/Graphene Heterostructure by Trap-Assisted Photogating
  • 文献类型:   Article
  • 作  者:   KIM HJ, LEE KJ, PARK J, SHIN GH, PARK H, YU K, CHOI SY
  • 作者关键词:   negative photoconductivity, trapassisted photogating effect, mote2, vdw heterostructure, photodevice
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Korea Adv Inst Sci Technol KAIST
  • 被引频次:   0
  • DOI:   10.1021/acsami.0c09960
  • 出版年:   2020

▎ 摘  要

Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency response. The NPC has been generally observed in low-dimensional materials, which can be easily affected by the trapping of photocarriers. However, a gradual transition between NPC and positive photoconductivity (PPC) by controlling the light intensity has not been reported. In this study, a gradual and reversible switching between NPC and PPC is achieved in a van der Waals heterostructure of graphene and MoTe2. The initially observed NPC state becomes a PPC state with the increase in light intensity. The switching between NPC and PPC is considered to originate from the hole trapping in MoTe2. The hole trapping can induce a shift in the Fermi level of MoTe2 and thus change the junction characteristics between the graphene and MoTe2, which determine the photo-response type (NPC or PPC). Notably, the switching from one state to the other can also be reversed, depending on the gate bias. The stable and reversible effect upon light illumination and application of a gate voltage could be used in optoelectronic devices and optical communications.