• 文献标题:   Mapping Conductance and Switching Behavior of Graphene Devices In Situ
  • 文献类型:   Article
  • 作  者:   DYCK O, SWETT JL, EVANGELI C, LUPINI AR, MOL JA, JESSE S
  • 作者关键词:   graphene, resistive contrast imaging, scanning transmission electron microscopy, secondary electron ebeam induced current, secondary electron yield
  • 出版物名称:   SMALL METHODS
  • ISSN:   2366-9608
  • 通讯作者地址:  
  • 被引频次:   2
  • DOI:   10.1002/smtd.202101245 EA DEC 2021
  • 出版年:   2022

▎ 摘  要

Graphene is proposed for use in various nanodevice designs, many of which harness emergent quantum properties for device functionality. However, visualization, measurement, and manipulation become nontrivial at nanometer and atomic scales, representing a significant challenge for device fabrication, characterization, and optimization at length scales where quantum effects emerge. Here, proof of principle results at the crossroads between 2D nano-electronic devices, e-beam-induced modulation, and imaging with secondary electron e-beam induced currents (SEEBIC) is presented. A device platform compatible with scanning transmission electron microscopy investigations is introduced. Then how the SEEBIC imaging technique can be used to visualize conductance and connectivity in single layer graphene nanodevices, even while supported on a thicker substrate (conditions under which conventional imaging fails) is shown. Finally, it is shown that the SEEBIC imaging technique can detect subtle differences in charge transport through time in nonohmic graphene nanoconstrictions indicating the potential to reveal dynamic electronic processes.