• 文献标题:   Origin of van Hove singularities in twisted bilayer graphene
  • 文献类型:   Article
  • 作  者:   RIBEIRO HB, SATO K, ELIEL GSN, DE SOUZA EAT, LU CC, CHIU PW, SAITO R, PIMENTA MA
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Univ Fed Minas Gerais
  • 被引频次:   13
  • DOI:   10.1016/j.carbon.2015.04.005
  • 出版年:   2015

▎ 摘  要

In this work, we present a resonance Raman spectroscopy study of more than 100 samples of twisted bilayer graphene (TBG) with a continuous distribution of twisting angles from 00 to 30, using three different laser excitation energies (1.96, 2.33 and 2.54 eV). From the Raman images of all investigated samples we could observe giant enhancements of the G band for samples with twisting angles between 90 and 17, in agreement with previous Raman studies of TBGs. However, although we investigated a large number of samples with low (<9 degrees) or high (>17 degrees) twisting angles, we could not observe the G-band enhancement that was predicted for these samples from the zone-folding of the single layer graphene electronic structure. Our results allow us to conclude that the van Hove singularities in the density of states are associated with the Moire pattern, which does not necessarily exhibit a translational symmetry. Moreover, we could observe that the Raman intensity ratio I-TBG/I-SLG in non-resonance cases is always smaller than two, and this value depends on the laser energy. This result is discussed in terms of the relaxation of photo-excited carriers in TBG, which is expected to increase with increasing laser excitation energy. (C) 2015 Elsevier Ltd. All rights reserved.