▎ 摘　　要

The interfacial thermal transport across graphene and an organic semiconductor, dinaphtho[2,3-b: 20,30-f]thieno[3,2-b] thiophene (DNTT), is investigated using molecular dynamics simulations. The average thermal boundary resistance (TBR) of graphene and DNTT is 4.88 + 0.12 x 10(-8) m(2) K W-1 at 300 K. We find that TBR of a graphene-DNTT heterostructure possesses as high as 83.4% reduction after the hydrogenation of graphene. Moreover, as the graphene vacancy increases from 0% to 6%, the TBR drops up to 39.6%. The reduction of TBR is mainly attributed to the coupling enhancement of graphene and DNTT phonons as evaluated from the phonon density of states. On the other hand, TBR keeps a constant value while the vacancy in the DNTT layer increases. The TBR would decrease when the temperature and coupling strength increase. These findings provide a useful guideline for the thermal management of the graphenebased organic electronic devices, especially the large area transistor arrays or sensors.