▎ 摘　　要

The adoption of nanostructured metal-oxides integrated graphene monolayers-based heterostructures appears to be a promising approach for enhancing the performance of various devices. However, precisely controlled growth of such unique heterostructures without disturbing the monolayer graphene characteristics remains a challenging task especially over a large area with good uniformity. Herein, ultrathin metal-oxide (p-Co3O4 and nZnO) nanostructures (MONSs) integrated graphene monolayer (GML) heterostructures are carefully developed by fascinating the graphene native defects while nucleation and growth of MONSs. Metal-oxides integrated graphene monolayers with lower material densities (