▎ 摘　　要

Graphene films grown by chemical vapor deposition on copper foils were hydrogenated using commercially viable methods. Parameters such as plasma power, plasma frequency, and sample temperature were varied to determine the maximum possible hydrogenation without etching the film. The kinetic energy of the ions inside the plasma is critical, in that higher kinetic energy ions tend to etch the film while lower kinetic energy ions participate in the hydrogenation process. The film sheet resistance was shown to increase, while the hole mobility was shown to decrease with increasing hydrogenation. Variable temperature measurements demonstrate a transition from semi-metallic behavior for graphene to semiconducting behavior for hydrogenated graphene. Sheet resistance measurements as a function of temperature also suggest the emergence of a bandgap in the hydrogenated graphene films. Published by Elsevier Ltd.