▎ 摘　　要

Chemical vapor deposition (CVD) is favorable for the growth of high-quality graphene on copper surfaces. Here, we employed CVD to synthesize large-grain (up to 70 mu m), crystalline graphene with a controlled grain morphology. Graphene was characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, and atomic force microscopy (AFM). The influence of methane (CH4 and hydrogen (H-2) concentrations were evaluated during the CVD graphene growth.