• 文献标题:   Ideal strength of doped graphene
  • 文献类型:   Article
  • 作  者:   WOO SJ, SON YW
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Korea Inst Adv Study
  • 被引频次:   6
  • DOI:   10.1103/PhysRevB.87.075419
  • 出版年:   2013

▎ 摘  要

While the mechanical distortions change the electronic properties of graphene significantly, the effects of electronic manipulation on its mechanical properties have not been known. Using first-principles calculation methods, we show that when graphene expands isotropically under equibiaxial strain, both the electron and hole doping can maintain or improve its ideal strength slightly and enhance the critical breaking strain dramatically. Contrary to the isotropic expansions, the electron doping decreases the ideal strength as well as critical strain of uniaxially strained graphene while the hole doping increases both. Distinct failure mechanisms depending on type of strains are shown to be origins of the different doping induced mechanical stabilities. Our findings may resolve a contradiction between recent experimental and theoretical results on the strength of graphene. DOI: 10.1103/PhysRevB.87.075419