• 文献标题:   Reversible chemical switches of functionalized nitrogen-doped graphene field-effect transistors
  • 文献类型:   Article
  • 作  者:   RONG R, LIU S
  • 作者关键词:   fieldeffect transistor, nitrogendoped graphene, doping effect, ti complex, reversible switch
  • 出版物名称:   CHINESE CHEMICAL LETTERS
  • ISSN:   1001-8417 EI 1878-5964
  • 通讯作者地址:   Hunan Univ
  • 被引频次:   2
  • DOI:   10.1016/j.cclet.2019.05.014
  • 出版年:   2020

▎ 摘  要

Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications. Herein, we report a method to noncovalently assembly titanium(IV) bis(ammoniumlactato) dihydroxide (Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching. As the adsorption and desorption of Ti complex in sequential treatments, the conductance of the nitrogen-doped graphene transistors was finely modulated. Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor. Under optimized conditions, nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity. (C) 2019 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.