▎ 摘　　要

Two reliable approaches for estimating the number of atomic planes of graphene films grown on Si substrate were demonstrated by Raman and ellipsometry spectroscopies. The first approach depends on the measurement of the ratio of the integrated Raman scattering intensity of the graphene G band to the optical phonon band of Si substrate (I-G/I-Si). The second approach belongs to ellipsometry measurement of the ratio of the amplitude of the reflected polarized light from the surface of the graphene films to the amplitude of reflected polarized light from the surface of the Si substrate (psi(G)/psi(Si)) These two approaches could efficiently recognize the number of atomic planes in the graphene films (1