• 文献标题:   Bilayer Graphene/Copper Hybrid On-Chip Interconnect: A Reliability Study
  • 文献类型:   Article
  • 作  者:   YU TH, LEE EK, BRIGGS B, NAGABHIRAVA B, YU B
  • 作者关键词:   bilayer graphene blg, breakdown, current annealing, interconnect, reliability
  • 出版物名称:   IEEE TRANSACTIONS ON NANOTECHNOLOGY
  • ISSN:   1536-125X EI 1941-0085
  • 通讯作者地址:   SUNY Albany
  • 被引频次:   19
  • DOI:   10.1109/TNANO.2010.2071395
  • 出版年:   2011

▎ 摘  要

In this paper, we investigate key reliability limiting factors of bilayer graphene (BLG)/copper hybrid interconnect system by examining its current-induced breakdown behavior and BLG/Cu contact. The results show that BLG displays an impressive current-carrying capacity (similar to 100 times that of Cu), and dc current-induced thermal annealing helps to significantly reduce the BLG/Cu contact resistance. Breakdown occurs with two different failure modes depending on stressing current density in each material subsystem, while contact damage dominates in scaled structure. The observed linear dependence of breakdown current on graphene geometry aspect ratio suggests Joule heating as the primary breakdown mechanism in graphene.