• 文献标题:   Raman Scattering at Pure Graphene Zigzag Edges
  • 文献类型:   Article
  • 作  者:   KRAUSS B, NEMESINCZE P, SKAKALOVA V, BIRO LP, VON KLITZING K, SMET JH
  • 作者关键词:   graphene, zigzag edge, raman spectroscopy, anisotropic etching
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Max Planck Inst Solid State Res
  • 被引频次:   122
  • DOI:   10.1021/nl102526s
  • 出版年:   2010

▎ 摘  要

Theory has predicted rich and very distinct physics for graphene devices with boundaries that follow either the armchair or the zigzag crystallographic directions. A prerequisite to disclose this physics in experiment is to be able to produce devices with boundaries of pure chirality. Exfoliated flakes frequently exhibit corners with an odd multiple of 30 degrees, which raised expectations that their boundaries follow pure zigzag and armchair directions. The predicted Raman behavior at such crystallographic edges however failed to confirm pure edge chirality. Here, we perform confocal Raman spectroscopy on hexagonal holes obtained after the anisotropic etching of prepatterned pits using carbothermal decomposition of SiO2. The boundaries of the hexagonal holes are aligned along the zigzag crystallographic direction and leave hardly any signature in the Raman map indicating unprecedented purity of the edge chirality. This work offers the first opportunity to experimentally confirm the validity of the Raman theory for graphene edges.