▎ 摘　　要

Due to the unique bandgap tunability of bilayer graphene, the preparation of large-sized bilayer graphene has attracted a wide range of attention. Herein, the preparation of bilayer graphene, from stacking order to growth mechanism, is reviewed, and the chemical vapor deposition (CVD) of AB-stacked bilayer graphene on copper substrate is emphasized. Various methods and growth strategies to synthesize bilayer graphene and the corresponding growth mechanisms are discussed. Mechanisms of layer-by-layer growth, the hydrogen passivation of graphene edges for the formation of bilayers, and carbon atoms penetrating through a copper wall for bilayer growth are included and highlighted for a better understanding of controlling bilayer graphene uniformity and forming its stacking order. Finally, the remaining challenges and the potential development of CVD-controlled growth of bilayer graphene are outlined.