▎ 摘　　要

The presented article findings indicate an efficient method for obtaining graphene oxide and its enhancement for electronic devices. The structural checking for confirming the molecular, crystalline and morphology characterization was carefully included. The measurement of the dielectric characteristics was considered in a wide range of voltage bias, temperature, and frequency for obtaining valuable evidence about the electrical storage and dissipation properties of the device for prospective applications. The measured dielectric parameters showed a dispersion attitude under the influence of all the studied factors. The results confirmed a reduction in both capacitance and conductance with increasing the applied frequency. Remarkably, a negative capacitance influence was also detected in the studied frequency range in wholly investigated devices. The deviations in the dielectric behavior could be attributed to the rearrange of charges at the GO/Si interface and to the influence of series resistance. Additionally, the current-density voltage characteristics were investigated under influence of temperature to provide the option for the diode as a temperature sensor. Accordingly, the GO-based heterojunction provided the projections to produce low cost with a wide scale of device applications.