▎ 摘　　要

There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We focus on high-aspect-ratio mesoscopic devices (W = 1000 nm, L = 100 nm) whose conductivity is well defined even without atomically precise crystal edges. We develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate realistic graphene quantum strain transistors (GQSTs). We define GQSTs as mechanically strained ballistic graphene transistors with on: off conductivity ratios > 10(4), which can be operated via modest gate voltages. Such devices would permit excellent transistor operations in pristine graphene, where there is no band gap. We consider all dominant uniaxial strain effects on conductivity, while including experimental considerations to guide the realization of the proposal. We predict multiple strain-tunable transport signatures, and demonstrate that a broad range of experimentally accessible device parameters lead to robust GQSTs. These devices could find applications in flexible electronic transistors, strain sensors, and valleytronics.