▎ 摘　　要

Graphene is experienced its golden age in the world of nanotechnology. Despite the fact that it takes key roles in the very complex areas, it is a simple two-dimensional material which is formed by only carbon atoms with a honeycomb form on especially another material. Graphene monolayer is usually supported by a known SiC substrate. SiC is a valuable material for both electronics and nuclear researches because of the excellent shielding and conduction properties. We simulated 500 keV proton irradiation effects on bilayer graphene on SiC by SRIM code in this paper. SRIM is a very detailed code capable of modeling ranging from very thick materials to single layer structures. This code is based on sending ions with specific energy to a target material. We presented damages and displacements caused by 500 keV protons to bilayer graphene/SiC target in the view of promising face of space and solar cell technology.