▎ 摘　　要

The graphene growth by thermal decomposition of silicon carbide at the temperature of similar to 1400A degrees C in a high vacuum of similar to 10(-6) Torr has been optimized. By Raman spectroscopy, the mean thickness of obtained graphene (2-4 single layers) has been estimated and the presence of high-quality graphene areas in the samples has been demonstrated. It has been found out that the four-point resistance of graphene increases in the region of its interface with water approximately by 25%. For the graphene-water interface in the transistor geometry, with variation in the gate-to-source voltage, the field effect corresponding to the hole type of charge carries in graphene has been revealed.