• 文献标题:   Opening a band gap in graphene by C-C bond alternation: a tight binding approach
  • 文献类型:   Article
  • 作  者:   KHOA DQ, NGUYEN CV, BUI LM, PHUC HV, HOI BD, HIEU NV, NHA VQ, HUYNH N, NHAN LC, HIEU NN
  • 作者关键词:   graphene, bond alternation, electronic propertie, tight binding approximation
  • 出版物名称:   MATERIALS RESEARCH EXPRESS
  • ISSN:   2053-1591
  • 通讯作者地址:   Nguyen Tat Thanh Univ
  • 被引频次:   1
  • DOI:   10.1088/2053-1591/aaf914
  • 出版年:   2019

▎ 摘  要

In the present work, we consider the electronic properties of graphene with Kekule structure formed from two different C-C bonds in its hexagonal lattice. When the C-C bond alternation was introduced, a small band gap has been opened in the band structure of graphene and it increases linearly by a difference in the bond lengths delta. While the applied strain along the zigzag or armchair direction causes band gap to decrease rapidly to zero, the strain in the other directions can increase the band gap. Interestingly, when the graphene with Kekule structure is strained, its band gap is inversely proportional to the bond length difference delta. Opening a band gap in graphene due to bond alternation and strain can open up new applications in nanoelectronic devices.