• 文献标题:   Defect-induced, temperature-independent, tunable magnetoresistance of partially fluorinated graphene foam
  • 文献类型:   Article
  • 作  者:   SAGAR RUR, SHEHZAD K, ALI A, STADLER FJ, KHAN Q, ZHAO JJ, WANG XH, ZHANG M
  • 作者关键词:   magnetoresistance, fluorination, graphene foam
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   12
  • DOI:   10.1016/j.carbon.2018.11.003
  • 出版年:   2019

▎ 摘  要

The magnetoresistance (MR) of graphene is fixed under a particular magnetic field and temperature but can be further improved or controlled by introducing artificial defect states. These artificial defects can be introduced via fluorination, which is a conventional method to control the magnitude of the MR required for magnetoelectronic applications. One of the main benefits of fluorination is the defluorination, which occurs within a few days. Herein, tunable and temperature-independent magnetotransport of graphene foam (GF) is achieved using a controlled fluorination process. The magnitude of the MR decreases with the increasing fluorination time (i.e., 30, 60 and 90 min), indicating that defect-induced scattering plays a major role in the magnetotransport properties of fluorinated GF (FGF). The magnitude of the MR in the FGF specimens at room temperature (under a magnetic field strength of 5 T) was observed for three months; a particular value of the MR (FGF-30-59%, FGF-60-58%, FGF-90-37%) is observed that is higher in magnitude than that on the first day of fluorination. In this way, fluorination of GF can provide a pathway to tune the magnetotransport properties, which is very useful for magnetoelectronics devices, especially highly sensitive magnetic sensors. (C) 2018 Elsevier Ltd. All rights reserved.