▎ 摘　　要

The effects of irradiation on graphene nano-disc (GND) non-volatile memory devices were investigated by Co-60 gamma-rays. The electrical characteristics of the devices were measured before and after y-irradiation with doses ranging from 50 to 1000 krad (Si). The electrical properties of the devices in the pristine and erased states were nearly unchanged in response to ionizing doses up to 1 Mrad (Si). However, the electrical properties of the devices in the programmed states were significantly degraded with increasing dose levels. The degradation was mainly the result of photoemission, positive charge traps in the surrounding oxides, and holes injected into the GND trapping layer. This study improves the understanding of radiation effects on graphene-based nano-electronic devices. Published by AIP Publishing.