• 文献标题:   Modulation of N-bonding configurations and their influence on the electrical properties of nitrogen-doped graphene
  • 文献类型:   Article
  • 作  者:   WANG ZG, CHEN YF, LI PJ, ZHOU JH, HE JR, ZHANG WL, GUO Z, LI YR, DONG MD
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Univ Elect Sci Technol China
  • 被引频次:   5
  • DOI:   10.1039/c6ra19278e
  • 出版年:   2016

▎ 摘  要

Nitrogen-doped graphene (NG) films have been grown on Cu foils by using imidazole (C3H4N2) and PMMA as solid N and C sources. The results show that the pyridinic and pyrrolic nitrogen-bonding configurations and the N doping concentration can be effectively modulated by the hydrogen flux. In addition, it reveals that the defect density of the NG film is dominated by the pyridinic-N configuration instead of the pyrrolic-N configuration from the Raman spectra. Furthermore, from the electrical measurements, it is concluded that the pyrrolic-N configuration has stronger donor ability, and lower carrier scattering than those of pyridinic-N configuration. This study provides fundamental insights to understand the role of various N-bonding configurations, but also give guidance to synthesize the NG with controllable N-bonding configurations.