• 文献标题:   Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex
  • 文献类型:   Article
  • 作  者:   LIU G, ZHUANG XD, CHEN Y, ZHANG B, ZHU JH, ZHU CX, NEOH KG, KANG ET
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   E China Univ Sci Technol
  • 被引频次:   84
  • DOI:   10.1063/1.3276556
  • 出版年:   2009

▎ 摘  要

A solution-processable and electroactive complex of poly (N-vinylcarbazole)-derivatized graphene oxide (GO-PVK) was prepared via amidation of end-functionalized PVK, from reversible addition fragmentation chain transfer polymerization, with tolylene-2,5-diisocyanate-functionalized graphene oxide. The Al/GO-PVK/ITO device exhibits bistable electrical conductivity switching and nonvolatile rewritable memory effects. Both the OFF and ON states of the memory device are stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10(8) read cycles, with an ON/OFF state current ratio in excess of 10(3). (C) 2009 American Institute of Physics. [doi:10.1063/1.3276556]