▎ 摘　　要

In this paper, we demonstrate the simulation of a graphene-based three-terminal junction using semi-classical drift-diffusion modeling. The DC and AC simulations are carried out separately and characterized at different temperatures and frequencies. The simulated structure is compared with previous results, and the noise spectrum is simulated to explore its behavior using graphene as an active region. At room temperature, the three-terminal junction demonstrates responsivity of up to 594.56 mV/mW, with mobility of 4000 cm(2)/Vs and a push-pull input signal of 100 mV at 1 KHz. The corresponding noise-equivalent power is as low as 19.4 pW/Hz(1/2). The simulated structure is able to obtain much higher responsivity and lower noise equivalent power by taking advantage of the higher mobility of the graphene. The voltage noise spectrum of the device is analyzed using equivalent two-dimensional geometry. At lower frequencies, flicker noise is found to dominate, due to the variation in charge carrier density.